• info@ictja.csic.es
  • +34 93 409 54 10

Ibáñez Insa, Jordi

Jordi Ibáñez Insa

Scientific Staff


+34 93 409 5410 ext. 236


This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Educational Background

  • Ramón y Cajal Fellow at ICTJA, 2004-2008
  • Postdoctoral Researcher at the School of Physics and Astronomy, University of Nottingham, 2002-2004
  • Ph.D., Physics, 2001, University of Barcelona

 

Research Interests

Jordi Ibáñez's research mainly deals with the use of different experimental techniques to study the optical, vibrational and crystallographic properties of solids. One of his main research topics deals with the application of Raman spectroscopy to characterize crystalline materials and investigate their fundamental lattice-dynamical properties. His other research interests include the application of x-ray diffraction for quantitative and structural analyses, and the investigation of the optical properties of solids with absorption spectroscopy, far-infrared transmission or photoluminescence. More recently, he has also been concerned with the application of high hydrostatic pressures to investigate materials. The current research projects in which he is involved, within ICTJA’s Group of Optical Properties of Solids, are focused on semiconductor compounds and nanostructures, i.e., synthetic crystals of huge technological importance. His research interests also include geological samples (such as rare mineral specimens or volcanic ashes), cement compounds, and cultural heritage materials.

 

Active Projects

Past Projects

 

PUBLICATIONS

2018

2017

2016

2015

2013

PREVIOUS SELECTED PUBLICATIONS

Alarcón-Lladó, E., J. Ibáñez, R. Cuscó, L. Artús, S. V. Novikov, and C. T. Foxon (2009), Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy, Semiconductor Science and Technology, 24(11), doi: 10.1088/0268-1242/24/11/115019.

Alarcón-Lladó, E., J. Ibáñez, R. Cuscó, L. Artús, J. D. Prades, S. Estradé, and J. R. Morante (2011), Ultraviolet Raman scattering in ZnO nanowires: Quasimode mixing and temperature effects, Journal of Raman Spectroscopy, 42(2), 153-159, doi: 10.1002/jrs.2664.

Alarcón-Lladó, E., S. Estradé, J. D. Prades, F. Hernandez-Ramírez, J. Arbiol, F. Peiró, J. Ibáñez, L. Artús, and J. R. Morante (2011), Substrate effects on the structural and photoresponse properties of CVD grown ZnO nanostructures: Alumina vs. silica, CrystEngComm, 13(2), 656-662, doi: 10.1039/c0ce00196a.

Cuscó, R., J. Ibáñez, E. Alarcón-Lladó, L. Artús, T. Yamaguchi, and Y. Nanishi (2009a), Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study, Physical Review B - Condensed Matter and Materials Physics, 80(15), doi: 10.1103/PhysRevB.80.155204.

Cuscó, R., J. Ibáñez, E. Alarcón-Lladó, L. Artús, T. Yamaguchi, and Y. Nanishi (2009b), Raman scattering study of the long-wavelength longitudinal-optical-phonon- plasmon coupled modes in high-mobility InN layers, Physical Review B - Condensed Matter and Materials Physics, 79(15), doi: 10.1103/PhysRevB.79.155210.

Ibáñez, J., A. Rapaport, C. Boney, R. Oliva, R. Cuscó, A. Bensaoula, and L. Artús (2012), Raman scattering by folded acoustic phonons in InGaN/GaN superlattices, Journal of Raman Spectroscopy, 43(2), 237-240, doi: 10.1002/jrs.3028.

Ibáñez, J., A. Segura, B. García-Domene, R. Oliva, F. J. Manjón, T. Yamaguchi, Y. Nanishi, and L. Artús (2012), High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN, Physical Review B - Condensed Matter and Materials Physics, 86(3), doi: 10.1103/PhysRevB.86.035210.

Ibáñez, J., F. J. Manjón, A. Segura, R. Oliva, R. Cuscó, R. Vilaplana, T. Yamaguchi, Y. Nanishi, and L. Artús (2011), High-pressure Raman scattering in wurtzite indium nitride, Applied Physics Letters, 99(1), doi: 10.1063/1.3609327.

Ibáñez, J., R. Oliva, M. De La Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier (2010), Structural and optical properties of dilute InAsN grown by molecular beam epitaxy, Journal of Applied Physics, 108(10), doi: 10.1063/1.3509149.

Jiménez-Riobóo, R. J., R. Cuscó, R. Oliva, N. Domènech-Amador, C. Prieto, J. Ibáñez, C. Boney, A. Bensaoula, and L. Artús (2012), Brillouin scattering determination of the surface acoustic wave velocity in In xGa 1-xN: A probe into the elastic constants, Applied Physics Letters, 101(6), doi: 10.1063/1.4744961.

Kudrawiec, R., M. Latkowska, G. Sȩk, J. Misiewicz, J. Ibáñez, M. Henini, and M. Hopkinson (2009), Fine structure of the localized emission from GaInNAs layers studied by micro-photoluminescence, Acta Physica Polonica A, 116(5), 930-932.

Kudrawiec, R., M. Syperek, P. Poloczek, J. Misiewicz, R. H. Mari, M. Shafi, M. Henini, Y. G. Gobato, S. V. Novikov, J. Ibáñez, M. Schmidbauer, and S. I. Molina (2009), Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence, Journal of Applied Physics, 106(2), doi: 10.1063/1.3168429.

Kudrawiec, R., P. Poloczek, J. Misiewicz, M. Shafi, J. Ibáñez, R. H. Mari, M. Henini, M. Schmidbauer, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, and M. F. Chisholm (2009), Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates, Microelectronics Journal, 40(3), 537-539, doi: 10.1016/j.mejo.2008.06.025.

Latkowska, M., R. Kudrawiec, G. Sek, J. Misiewicz, J. Ibanez, M. Hopkinson, and M. Henini (2011), Micro-photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations, Physica Status Solidi (C) Current Topics in Solid State Physics, 8(5), 1655-1658, doi: 10.1002/pssc.201000834.

Oliva, R., J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Serafinczuk, O. Martnez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, and L. Artús (2012), Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy, Journal of Applied Physics, 111(6), doi: 10.1063/1.3693579.

Pastor, D., J. Olea, M. Toledano-Luque, I. Mártil, G. González-Díaz, J. Ibañez, R. Cuscó, and L. Artús (2009), Pulsed laser melting effects on single crystal gallium phosphide.

Pastor, D., J. Olea, A. Del Prado, E. García-Hemme, I. Mártil, G. González-Díaz, J. Ibáñez, R. Cuscó, and L. Artús (2011a), UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation, Semiconductor Science and Technology, 26(11), doi: 10.1088/0268-1242/26/11/115003.

Pastor, D., J. Olea, A. Del Prado, E. García-Hemme, I. Mártil, G. González-Díaz, J. Ibáñez, R. Cuscó, and L. Artús (2011b), Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers.

Queralt, I., J. Ibañez, E. Marguí, and J. Pujol (2010), Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy, Spectrochimica Acta - Part B Atomic Spectroscopy, 65(7), 583-586, doi: 10.1016/j.sab.2010.05.008.

Valdueza-Felip, S., J. Ibáñez, E. Monroy, M. González-Herráez, L. Artús, and F. B. Naranjo (2012), Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer, Thin Solid Films, 520(7), 2805-2809, doi: 10.1016/j.tsf.2011.12.034.