Raman Spectroscopy and Photoluminescence Laboratory



The Laboratory of Raman Spectrocopy and Photoluminescence is focused on the study of the optical properties of semiconductor materials. Among others, we have carried out Raman scattering studies on a variety of III-V compound systems such as GaN, InN, InGaN, InAs/GaAs, InGaAs, InP, AlGaSb, InAsSb, GaSb, GaAsN, as well as on ZnO, a II-VI wide band gap material which is intensively being investigated because of its potential applications in transparent electronics and in blue and UV light emitters.





Luis Artús, Scientific Leader

Ramon Cuscó, Senior Research Scientist

Jordi Ibañez, Senior Research Scientist




Jobin-Yvon T64000 triple Raman spectrometer with capabilities for PL and PLE measurements:

640 mm focal length: 0.7 cm-1 spectral resolution

• CCD detector: high-sensitivity, low noise detector 

• Confocal micro-Raman setup: lateral resolution about 1 um 

• Cryostat: for low temperature measurements in macrocamera configuration 

• Freeze-drying cryostage: for micro-Raman measurements to be carried out from liquid nitrogen temperature up to 600 o


Horiba Jobin-Yvon FHR1000 single spectrometer dedicated for PL measurements:

• 1000 mm focal length

• CCD detector: high-sensitivity, low noise detector 

• InGaAs detector for NIR detection


High-pressure set-up:

• Diamond anvil cell

• Microdriller


Excitation sources:

• Ar+ laser: 25 W (9W in UV)

• Dye laser

• Ti:sapphire laser

• He-Cd laser: 50 mW 

• He-Ne laser: 30 mW



C/ Lluis Solé Sabaris s/n, Barcelona, E-08028 Spain
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Institut de Ciències de la Terra Jaume Almera
+34 93 409 54 10