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The Laboratory of Raman Spectrocopy and Photoluminescence is focused on the study of the optical properties of semiconductor materials. Among others, we have carried out Raman scattering studies on a variety of III-V compound systems such as GaN, InN, InGaN, InAs/GaAs, InGaAs, InP, AlGaSb, InAsSb, GaSb, GaAsN, as well as on ZnO, a II-VI wide band gap material which is intensively being investigated because of its potential applications in transparent electronics and in blue and UV light emitters.

Facilities

The laboratory is equipped with:

Jobin-Yvon T64000 triple Raman spectrometer with capabilities for PL and PLE measurements:

  • 640 mm focal length: 0.7 cm-1spectral resolution
  • CCD detector: high-sensitivity, low noise detector 
  • Confocal micro-Raman setup: lateral resolution about 1 um 
  • Cryostat: for low temperature measurements in macrocamera configuration 
  • Freeze-drying cryostage: for micro-Raman measurements to be carried out from liquid nitrogen temperature up to 600 o

Horiba Jobin-Yvon FHR1000 single spectrometer dedicated for PL measurements:

  • 1000 mm focal length
  • CCD detector: high-sensitivity, low noise detector 
  • InGaAs detector for NIR detection

High-pressure set-up:

  • Diamond anvil cell
  • Microdriller

Excitation sources:

  • Ar+ laser: 25 W (9W in UV)
  • Dye laser
  • Ti:sapphire laser
  • He-Cd laser: 50 mW 
  • He-Ne laser: 30 mW

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